Lithographic band gap tuning in photonic band gap crystals
نویسندگان
چکیده
We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (.95%! mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response. © 1996 American Vacuum Society.
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